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Research projects
at the NISRC covers a wide spectrum.
Some areas of research are as follows:-
Complementary Bipolar
technology incorporating buried silicide technology.
Technology for the production of
ultra-thin SOI substrates.
WNx and Cu high density
interconnect technology for advanced integrated circuits.
Low temperature bonding of silicon
substrates using oxygen plasma.
Thermal via technology for advanced
bipolar integrated circuits.
Buried silicide ground plane
technology for advanced integrated circuits.
Silicon micromachining technology for
sensor applications.
These projects offer different combinations of microelectronics
technology, device and process simulation, device and process design. The projects are all
novel and in areas of strategic importance for future integrated circuits. They build on
the current strengths of NISRC and may involve direct collaboration with industry.
Application for further funding from research councils is planned in a number of these
project areas.
For further details please contact : Prof
Harold S. Gamble
e-mail:-(h.gamble@ee.qub.ac.uk)
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